Ab initio study of helium in Li4SiO4 crystals: Electronic properties,migration, and vacancy capture mechanism

Li₄SiO₄ crystal is a candidate material for tritium breeder material. Vacancy defects and He atoms will be produced in the crystal after neutron irradiation in fusion reactor. In previous research, we learned vacancy defects mainly include V_O⁰, V_O²⁺, and V_Li⁰, meanwhile, He atoms are easy to migrate and aggregate in the crystal. In order to understand the relationship between vacancy defects and He atoms, we use density functional theory (DFT) to study the interaction mechanism between vacancy and He atom. The results show that the local stable sites of He atoms are related to the surrounding charge distribution. V_O²⁺ and V_Li⁰ can capture interstitial He atoms, and it is difficult to escape the vacancies, thereby increasing the nucleation center of He atoms. V_O⁰ promotes the diffusion of He atoms in the interstitial space, which will cause small helium bubbles to merge more easily.     

Microstructure and some properties of powder-pack borided Ti–5Mo–5V–8Cr–3Al alloy with special attention to the microstructure at the interface TiB/substrate

The borided layer was prepared on the surface of the Ti–5Mo–5V–8Cr–3Al alloy by powder-pack boriding at 1000°C-10h. SEM, EPMA and TEM were used to investigate the effects of alloying elements (Al, V, Mo and Cr) on the growth of TiB whiskers in the borided Ti–5Mo–5V–8Cr–3Al alloy. Wear properties of borided Ti–5Mo–5V–8Cr–3Al alloy were investigated using dry reciprocating friction tests. SEM results show that the thickness of boride layer in Ti–5Mo–5V–8Cr–3Al alloy is thinner than that in the Cp-Ti. This is attributed to the enrichment of alloying elements especially V in TiB/substrate by TEM, which hinders the diffusion of B atoms, thus resulting in the short and thick TiB whiskers in Ti–5Mo–5V–8Cr–3Al alloy. Borided Ti–5Mo–5V–8Cr–3Al alloy has the better wear resistance than as-received alloy.     

Ablative Radiotherapy Reprograms the Tumor Microenvironment of a Pancreatic Tumor in Favoring the Immune Checkpoint Blockade Therapy

The low overall survival rate of patients with pancreatic cancer has driven research to seek a new therapeutic protocol. Radiotherapy (RT) is frequently an option in the neoadjuvant or palliative settings for pancreatic cancer treatment. This study explored the effect of RT protocols on the tumor microenvironment (TME) and their consequent impact on anti-programmed cell death ligand-1 (PD-L1) therapy. Using a murine orthotopic pancreatic tumor model, UN-KC-6141, RT-disturbed TME was examined by immunohistochemical staining. The results showed that ablative RT is more effective than fractionated RT at recruiting T cells. On the other hand, fractionated RT induces more myeloid-derived suppressor cell infiltration than ablative RT. The RT-disturbed TME presents a higher perfusion rate per vessel. The increase in vessel perfusion is associated with a higher amount of anti-PD-L1 antibody being delivered to the tumor. Animal survival is increased by anti-PD-L1 therapy after ablative RT, with 67% of treated animals surviving more than 30 days after tumor inoculation compared to a median survival time of 16.5 days for the control group. Splenocytes isolated from surviving animals were specifically cytotoxic for UN-KC-6141 cells. We conclude that the ablative RT-induced TME is more suited than conventional RT-induced TME to combination therapy with immune checkpoint blockade.     

涪陵地区茅三段热液白云岩展布影响因素分析

针对热液白云岩展布非均质性强的问题,开展基底断裂与茅三段沉积演化关系研究,分析断裂样式与白云岩分布关系,建立沉积演化模式,预测白云岩的分布。研究结果表明:茅三段可划分为5个小层,1~3小层为白云岩发育主要时期,4~5小层为台地均一化时期,不发育白云岩;15-1、15-2和16号基底断裂控制了早期“台-洼”相间的沉积地貌,断裂附近的地貌高部位为生屑滩发育有利部位,为白云岩的发育提供物质基础;15-1、15-2号基底断裂样式为花状,周边生屑滩白云石化程度高,为白云岩发育最有利区;16号基底断裂为直立状,附近白云石化发育程度较低,为白云岩发育较有利区。研究成果可为热液白云岩领域的进一步勘探提供指导依据。     

Effect of the ZIF‐8 Distribution in Mixed‐Matrix Membranes Based on Matrimid® 5218‐PEG on CO2 Separation

In theory, the combination of inorganic materials and polymers may provide a synergistic performance for mixed‐matrix membranes (MMMs); however, the filler dispersion into the MMMs is a crucial technical parameter for obtaining compelling MMMs. The effect of the filler distribution on the gas separation performance of the MMMs based on Matrimid®‐PEG 200 and ZIF‐8 nanoparticles is demonstrated. The MMMs were prepared by two different membrane preparation procedures, namely, the traditional method and non‐dried metal‐organic framework (MOF) method. In CO₂/CH₄ binary mixtures, the MMMs were tested under fixed conditions and characterized by various methods. Finally, regardless of the MMM preparation procedure, the incorporation of 30 wt % ZIF‐8 nanoparticles allowed to increase the CO₂ permeability in MMMs. The ZIF‐8 dispersion influenced significantly the separation factor.     

Enhanced photoreactivity of MOFs by intercalating interlayer bands via simultaneous ?NCO and ?SCu modification

Herein, we propose a novel method to enhance the photoreactivity of an MOF catalyst by grafting isocyanate bonds ( NCO) and sulfhydryl-complexed copper ( SCu) onto ZIF-8 (NIF-SCu). The grafting process intercalated interlayer bands between the conduction and valence bands of ZIF-8, thereby providing a “ladder” for facile electron transition. The extreme improvement in the photoreactivity of NIF-SCu could be attributed to the enhancement in light responses in the range of 350–450 nm by  NCO groups and the widening of the visible light range of the MOF by  SCu groups. The formation of staggered energy levels in NIF-SCu could also narrow the band gap, lower the resistance, and facilitate the transfer of photogenerated carriers, thereby generating electrons with strong reduction potential in the  SCu conduction band. This study provides a new strategy for improving or even endowing the photoactivity of environmental functional materials with wide bandgaps.     

Effects of sintering temperature and Bi2O3, Y2O3 and MgO co-doping on the dielectric properties of X8R BaTiO3-based ceramics

Bi₂O₃, Y₂O₃ and MgO co-doped BaTiO₃ (BT)-based X8R ceramics were synthesized successfully for the first time. The effects of the sintering temperature and Bi₂O₃, Y₂O₃ and MgO dopants on the dielectric properties were investigated systematically. Bi₂O₃ doping can increase the Curie temperature (T_c), but reduces the overall dielectric permittivity. On the other hand, Y₂O₃ doping is beneficial to the formation of core-shell microstructure and the increase of T_c, whereas MgO can prevent excessive Y₂O₃ from diffusing into grain core, and thereby further contributes to the generation of the core–shell microstructure. The generation of the typical core-shell microstructure was confirmed and investigated in detail by using transmission electron microscopy (TEM). It is argued that the synergistic effects of Bi₂O₃, Y₂O₃ and MgO co-doping in terms of the formation of the core-shell structure and the increase of T_c, can help improve the temperature stability of the dielectric permittivity effectively. Increasing the sintering temperature leads to an increase in the grain size, which in turn leads to an increase in the overall dielectric permittivity due to the grain size effect.     

C8 BTBT薄膜结晶形貌及OTFT器件性能研究

以p型共轭有机小分子2,7二辛基[1]苯并噻吩并[3,2‐b]苯并噻吩(C8‐BTBT)作为底栅顶接触有机薄膜晶体管(OTFT)的有源层,采用浸渍提拉法、喷墨打印法和真空蒸镀法三种制备工艺,探究半导体薄膜载流子迁移率与结晶形貌的关系,发现不同工艺下有机小分子呈现出不同的生长行为和结晶情况,在很大程度上决定了OTFT器件性能的优劣;此外,通过XRD分析研究了退火处理对C8‐BTBT结晶的影响。结果表明,真空蒸镀制备的薄膜具有更高的结晶度、衬底覆盖率高,并且呈现出SK(Stranski‐Krastanov)模式的结晶生长特征,相应器件中陷阱密度最低,迁移率高达5.44 cm^2·V^-1·s^-1,开关比超过106;且退火处理会严重破坏C8‐BTBT薄膜的结晶。因此,控制半导体层的生长行为,提升半导体层的覆盖率和结晶度是制备高性能共轭小分子OTFT器件的有效途径。     

Compiler compatible 5.66 Mb/mm2 8T 1R1W register file in 14 nm FinFET technology

1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm² is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm² array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall V_min of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances.